PHP191NQ06LT,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 1mA

Element Configuration :

Single

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Packaging :

Tube

Drain to Source Breakdown Voltage :

55V

Max Dual Supply Voltage :

55V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

178 ns

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

95.6nC @ 5V

Number of Terminations :

3

Number of Channels :

1

Published :

2010

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.0044Ohm

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

240A

Turn On Delay Time :

63 ns

JESD-609 Code :

e3

Height :

9.4mm

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Length :

10.3mm

Width :

4.7mm

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Continuous Drain Current (ID) :

75A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 25A, 10V

Weight :

6.000006g

Rise Time :

232ns

Avalanche Energy Rating (Eas) :

560 mJ

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation :

300W

Number of Pins :

3

Pin Count :

3

Case Connection :

DRAIN

Vgs (Max) :

±15V

Turn-Off Delay Time :

273 ns

Input Capacitance (Ciss) (Max) @ Vds :

7665pF @ 25V

Gate to Source Voltage (Vgs) :

15V