PHP18NQ11T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

72A

Number of Elements :

1

Pin Count :

3

Number of Pins :

3

FET Type :

N-Channel

Continuous Drain Current (ID) :

18A

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Turn-Off Delay Time :

18 ns

Packaging :

Tube

Turn On Delay Time :

6 ns

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain to Source Breakdown Voltage :

110V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Power Dissipation :

79W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75

Drain-source On Resistance-Max :

0.09Ohm

Rise Time :

36ns

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

12 ns

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Power Dissipation-Max :

79W Tc

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

Vgs (Max) :

±20V

Max Dual Supply Voltage :

110V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Avalanche Energy Rating (Eas) :

70 mJ

RoHS Status :

ROHS3 Compliant

Surface Mount :

No