PHP174NQ04LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0048Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 5V

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

75A

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

560 mJ

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

40V

JESD-609 Code :

e3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

250W Tc

Pulsed Drain Current-Max (IDM) :

240A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±15V

Input Capacitance (Ciss) (Max) @ Vds :

5345pF @ 25V

Series :

TrenchMOS™

Package / Case :

TO-220-3

Packaging :

Tube