PHP152NQ03LTA,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Packaging :

Tube

Mounting Type :

Through Hole

Series :

TrenchMOS™

Power Dissipation-Max :

150W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Number of Terminations :

3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

240A

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

75A

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.005ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Published :

1997

Pin Count :

3

Transistor Application :

SWITCHING

Surface Mount :

No

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

560 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

25V

Current - Continuous Drain (Id) @ 25°C :

75A Tc