PHP152NQ03LTA,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

240A

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.005ohm

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Pin Count :

3

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Terminations :

3

Power Dissipation-Max :

150W Tc

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

FET Type :

N-Channel

DS Breakdown Voltage-Min :

25V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

560 mJ

Series :

TrenchMOS™

Vgs(th) (Max) @ Id :

2V @ 1mA