PHP14NQ20T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drain-source On Resistance-Max :

0.23Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

200V

Drain Current-Max (Abs) (ID) :

14A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

230m Ω @ 7A, 10V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Pulsed Drain Current-Max (IDM) :

56A

Avalanche Energy Rating (Eas) :

70 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V

Terminal Position :

Single

Pin Count :

3

Power Dissipation-Max :

125W Tc

Case Connection :

DRAIN

Packaging :

Tube

Published :

1997

Package / Case :

TO-220-3