PHP143NQ04T,127
- Mfr.Part #
- PHP143NQ04T,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A TO220AB
- Stock
- 24,025
- In Stock :
- 24,025
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 75A
- Power Dissipation-Max :
- 200W Tc
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 40V
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 25A, 10V
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 475 mJ
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Voltage (Vdss) :
- 40V
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2840pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Published :
- 1997
- Pulsed Drain Current-Max (IDM) :
- 240A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Series :
- TrenchMOS™
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Datasheets
- PHP143NQ04T,127
PHP143NQ04T,127 Documents

N-Channel Tube 5.2m Ω @ 25A, 10V ±20V 2840pF @ 25V 52nC @ 10V 40V TO-220-3
PHP143NQ04T,127 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 475 mJ.A device's maximal input capacitance is 2840pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
PHP143NQ04T,127 Features
the avalanche energy rating (Eas) is 475 mJ
based on its rated peak drain current 240A.
a 40V drain to source voltage (Vdss)
PHP143NQ04T,127 Applications
There are a lot of NXP USA Inc.
PHP143NQ04T,127 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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