PHP143NQ04T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tube

FET Type :

N-Channel

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

DS Breakdown Voltage-Min :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 25A, 10V

Avalanche Energy Rating (Eas) :

475 mJ

Series :

TrenchMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

200W Tc

Drain-source On Resistance-Max :

0.0052Ohm

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Published :

1997

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

240A

Number of Terminations :

3

Number of Elements :

1

ECCN Code :

EAR99