PHP129NQ04LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3965pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Published :

1997

FET Type :

N-Channel

Packaging :

Tube

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Unknown

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

475 mJ

Vgs(th) (Max) @ Id :

2V @ 1mA

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Pin Count :

3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0071Ohm

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±15V

Number of Terminations :

3

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

75A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

240A

Gate Charge (Qg) (Max) @ Vgs :

44.2nC @ 5V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Power Dissipation-Max :

200W Tc

Drain to Source Voltage (Vdss) :

40V