PHP129NQ04LT,127
- Mfr.Part #
- PHP129NQ04LT,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A TO220AB
- Stock
- 5,366
- In Stock :
- 5,366
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3965pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Published :
- 1997
- FET Type :
- N-Channel
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Series :
- TrenchMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 475 mJ
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0071Ohm
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±15V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 75A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 240A
- Gate Charge (Qg) (Max) @ Vgs :
- 44.2nC @ 5V
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Power Dissipation-Max :
- 200W Tc
- Drain to Source Voltage (Vdss) :
- 40V
- Datasheets
- PHP129NQ04LT,127
PHP129NQ04LT,127 Documents

N-Channel Tube 5m Ω @ 25A, 10V ±15V 3965pF @ 25V 44.2nC @ 5V 40V TO-220-3
PHP129NQ04LT,127 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 475 mJ.A device's maximum input capacitance is 3965pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 75A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 240A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
PHP129NQ04LT,127 Features
the avalanche energy rating (Eas) is 475 mJ
based on its rated peak drain current 240A.
a 40V drain to source voltage (Vdss)
PHP129NQ04LT,127 Applications
There are a lot of NXP USA Inc.
PHP129NQ04LT,127 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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