PHP119NQ06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Reach Compliance Code :

Unknown

Number of Elements :

1

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 25V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.0071Ohm

Drain to Source Voltage (Vdss) :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

240A

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

7.1m Ω @ 25A, 10V

Power Dissipation-Max :

200W Tc

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Terminations :

3

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Published :

1997

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

55V

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

75A

Packaging :

Tube

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

280 mJ