PHP112N06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

4352pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Drain Current-Max (Abs) (ID) :

75A

Vgs(th) (Max) @ Id :

4V @ 1mA

Avalanche Energy Rating (Eas) :

360 mJ

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

55V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

200W Tc

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.008Ohm

Published :

1997

ECCN Code :

EAR99