PHP110NQ08T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

75V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

440A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

4860pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.009Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Series :

TrenchMOS™

Power Dissipation-Max :

230W Tc

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

560 mJ

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

JESD-609 Code :

e3

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

113.1nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

75V

Qualification Status :

Not Qualified

Published :

1997

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3