PHP110NQ06LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

240A

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 5V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

200W Tc

Avalanche Energy Rating (Eas) :

280 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±15V

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0093Ohm

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

ECCN Code :

EAR99

Number of Elements :

1

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.95

Terminal Position :

Single

Transistor Element Material :

SILICON

Published :

1997

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

3960pF @ 25V

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ