PHP110NQ06LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±15V

Pulsed Drain Current-Max (IDM) :

240A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

200W Tc

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

75A

DS Breakdown Voltage-Min :

55V

HTS Code :

8541.29.00.95

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Application :

SWITCHING

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Published :

1997

Drain-source On Resistance-Max :

0.0093Ohm

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 5V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

280 mJ

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3960pF @ 25V

JESD-609 Code :

e3

Series :

TrenchMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE