PHN203,518

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

14.6nC @ 10V

Continuous Drain Current (ID) :

6.3A

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Drain-source On Resistance-Max :

0.03Ohm

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 1mA

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Finish :

NICKEL PALLADIUM GOLD

JESD-609 Code :

e4

Terminal Form :

Gull wing

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

21 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss) :

135 pF

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Max Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 20V

Number of Terminations :

8

Turn On Delay Time :

5 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

2W

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Series :

TrenchMOS™

Max Dual Supply Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Number of Pins :

8

Pin Count :

8

Fall Time (Typ) :

11 ns

Rise Time :

6ns