PHN203,518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Rise Time :

6ns

Factory Lead Time :

16 Weeks

Series :

TrenchMOS™

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

6.3A

RoHS Status :

RoHS Compliant

FET Feature :

Logic Level Gate

JESD-609 Code :

e4

Drain-source On Resistance-Max :

0.03Ohm

Feedback Cap-Max (Crss) :

135 pF

Gate Charge (Qg) (Max) @ Vgs :

14.6nC @ 10V

Number of Pins :

8

Turn-Off Delay Time :

21 ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

NICKEL PALLADIUM GOLD

Surface Mount :

yes

Radiation Hardening :

No

Pin Count :

8

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Published :

2010

Turn On Delay Time :

5 ns

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Fall Time (Typ) :

11 ns

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Dual Supply Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 20V

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 1mA

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8