PHD9NQ20T,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Turn On Delay Time :

8 ns

Series :

TrenchMOS™

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

959pF @ 25V

Radiation Hardening :

No

Max Dual Supply Voltage :

200V

Transistor Application :

SWITCHING

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Vgs (Max) :

±30V

Power Dissipation :

88W

Continuous Drain Current (ID) :

8.7A

Number of Pins :

3

Number of Terminations :

2

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Rise Time :

19ns

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.4Ohm

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

200V

Published :

2010

Power Dissipation-Max :

88W Tc

Terminal Form :

Gull wing

Factory Lead Time :

26 Weeks

Turn-Off Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)