PHD96NQ03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0075Ohm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Surface Mount :

yes

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

115W Tc

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

26.7nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 1mA

Series :

TrenchMOS™

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

185 mJ

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Application :

SWITCHING

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

4.95m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

25V

Drain Current-Max (Abs) (ID) :

75A

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Pin Count :

3

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63