PHD97NQ03LT,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Power Dissipation-Max :

107W Tc

Series :

TrenchMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 12V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain-source On Resistance-Max :

0.0106Ohm

Surface Mount :

yes

HTS Code :

8541.29.00.75

Power Dissipation :

107W

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 4.5V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Pin Count :

3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

26 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

33ns

Fall Time (Typ) :

12 ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

25V

Turn-Off Delay Time :

20 ns

Continuous Drain Current (ID) :

75A

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Max Dual Supply Voltage :

25V

Element Configuration :

Single

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

60 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN