PHC2300,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2011

Vgs(th) (Max) @ Id :

2V @ 1mA

Power Dissipation :

1.6W

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Number of Elements :

2

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

102pF @ 50V

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-609 Code :

e4

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

300V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

6.24nC @ 10V

Drain Current-Max (Abs) (ID) :

0.34A

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

340mA

Drain to Source Voltage (Vdss) :

300V

Terminal Position :

Dual

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

6Ohm

Current - Continuous Drain (Id) @ 25°C :

340mA 235mA

JEDEC-95 Code :

MS-012AA

Transistor Application :

SWITCHING

FET Type :

N and P-Channel

Number of Pins :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)