PHC21025,118

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.8V @ 1mA

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 20V

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Number of Terminations :

8

Number of Pins :

8

Transistor Element Material :

SILICON

Power Dissipation :

2W

Published :

2011

FET Feature :

Logic Level Gate

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.5A

Number of Elements :

2

FET Type :

N and P-Channel

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

8-SOIC (0.154, 3.90mm Width)