PH6030L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

235

Current - Continuous Drain (Id) @ 25°C :

76.7A Tc

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Published :

2008

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Power Dissipation-Max :

62.5W Tc

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

300A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Package / Case :

SC-100, SOT-669

Terminal Position :

Single

JEDEC-95 Code :

MO-235

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

95 mJ

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0097Ohm

Drain Current-Max (Abs) (ID) :

76.7A

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 12V

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

6m Ω @ 25A, 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PSSO-G4

Number of Elements :

1

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified