PH6030AL,115
- Mfr.Part #
- PH6030AL,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 79A LFPAK56
- Stock
- 8,578
- In Stock :
- 8,578
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1425pF @ 12V
- Drain to Source Voltage (Vdss) :
- 30V
- Max Operating Temperature :
- 175°C
- Number of Pins :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 79A Tc
- Turn-Off Delay Time :
- 31 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Fall Time (Typ) :
- 11 ns
- Input Capacitance :
- 1.425nF
- Drain to Source Resistance :
- 7.87MOhm
- Max Power Dissipation :
- 55W
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -55°C
- Package / Case :
- SC-100, SOT-669
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 15A, 10V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Supplier Device Package :
- LFPAK56, Power-SO8
- Series :
- TrenchMOS™
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 35V
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 25 ns
- Rds On Max :
- 6 mΩ
- Rise Time :
- 43ns
- Continuous Drain Current (ID) :
- 79A
- Radiation Hardening :
- No
- Power Dissipation :
- 55W
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PH6030AL,115

N-Channel Tape & Reel (TR) 6mOhm @ 15A, 10V 1425pF @ 12V 24nC @ 10V 30V SC-100, SOT-669
PH6030AL,115 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1425pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 35V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 35V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 7.87mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.
PH6030AL,115 Features
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 35V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 7.87mOhm
a 30V drain to source voltage (Vdss)
PH6030AL,115 Applications
There are a lot of Nexperia USA Inc.
PH6030AL,115 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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