PH2369,126
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- Mfr.Part #
- PH2369,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A TO92-3
- Stock
- 51,871
- In Stock ：
- 51,871
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 500mW
- Current - Collector Cutoff (Max) :
- 400nA ICBO
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Published :
- 2009
- Frequency - Transition :
- 500MHz
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 200mA
- Datasheets
- PH2369,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 400nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PH2369,126 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.
PH2369,126 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
PH2369,126 Applications
There are a lot of NXP USA Inc.
PH2369,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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