PH2369,112

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Mfr.Part #
PH2369,112
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 15V 0.2A TO92-3
Stock
54,532
In Stock :
54,532

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
VCEsat-Max :
0.25 V
Collector-Base Capacitance-Max :
4pF
Frequency - Transition :
500MHz
Qualification Status :
Not Qualified
Pin Count :
3
Transistor Element Material :
SILICON
Configuration :
Single
JESD-30 Code :
O-PBCY-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2009
Operating Temperature :
150°C TJ
Terminal Position :
BOTTOM
JESD-609 Code :
e3
ECCN Code :
EAR99
Transition Frequency :
500MHz
Terminal Finish :
Matte Tin (Sn)
Turn On Time-Max (ton) :
10ns
Number of Elements :
1
Power Dissipation-Max (Abs) :
0.5W
Surface Mount :
No
Turn Off Time-Max (toff) :
20ns
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 1V
Number of Terminations :
3
Current - Collector (Ic) (Max) :
200mA
HTS Code :
8541.21.00.75
Power - Max :
500mW
Packaging :
Tube
Voltage - Collector Emitter Breakdown (Max) :
15V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
NPN
Transistor Type :
NPN
Reach Compliance Code :
Unknown
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) :
400nA ICBO
Datasheets
PH2369,112
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PH2369,112 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), PH2369,112 pinout, PH2369,112 datasheet PDF, PH2369,112 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PH2369,112 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PH2369,112


NPN 150°C TJ 400nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Tube Through Hole

PH2369,112 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 1V.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 500MHz.The device has a 15V maximal voltage - Collector Emitter Breakdown.

PH2369,112 Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
a transition frequency of 500MHz


PH2369,112 Applications


There are a lot of NXP USA Inc.
PH2369,112 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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