PEMX1,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

300mW

Max Collector Current :

100mA

Current - Collector (Ic) (Max) :

100mA

Terminal Form :

Flat

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Mount :

Surface Mount

Number of Pins :

6

Pin Count :

6

Collector Emitter Breakdown Voltage :

40V

Collector Emitter Voltage (VCEO) :

40V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

100MHz

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

P*MX1

Power Dissipation :

200mW

Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Terminal Finish :

Tin (Sn)

Number of Elements :

2

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Factory Lead Time :

4 Weeks

Published :

2009

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

50V

Transistor Element Material :

SILICON