PEMX1,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Tin (Sn)

Length :

1.7mm

Operating Temperature :

150°C TJ

Number of Pins :

6

Pin Count :

6

Number of Terminations :

6

ECCN Code :

EAR99

Max Power Dissipation :

200mW

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Saturation Voltage :

200mV

Element Configuration :

Dual

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Transistor Type :

2 NPN (Dual)

Base Part Number :

P*MX1

Transistor Application :

SWITCHING

Power - Max :

300mW

REACH SVHC :

No SVHC

Polarity :

NPN

Number of Elements :

2

Collector Base Voltage (VCBO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Width :

1.3mm

Radiation Hardening :

No

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Published :

2009

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

40V

JESD-609 Code :

e3

Terminal Form :

Flat

Max Breakdown Voltage :

40V

hFE Min :

120

Height :

600μm

Transition Frequency :

100MHz

Package / Case :

SOT-563, SOT-666

Lead Free :

Lead Free

Gain Bandwidth Product :

100MHz