PEMB9,315

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Published :

2011

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Resistor - Base (R1) :

10k Ω

Mount :

Surface Mount

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Pin Count :

6

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA

Resistor - Emitter Base (R2) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

100mV

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Polarity :

PNP

Base Part Number :

MB9

Number of Pins :

6

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Number of Terminations :

6