PDTB123YT,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Resistor - Emitter Base (R2) :

10 k Ω

Resistor - Base (R1) :

2.2 k Ω

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

50V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Base Part Number :

PDTB123

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Tin (Sn)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.55

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Power - Max :

250mW

Transistor Application :

SWITCHING

Current - Collector (Ic) (Max) :

500mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Transistor Type :

PNP - Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Element Material :

SILICON

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Number of Terminations :

3

Pin Count :

3

Number of Elements :

1