PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A SOT89
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Max Power Dissipation :
- 550mW
- Published :
- 2003
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 80V
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- hFE Min :
- 250
- Gain Bandwidth Product :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Length :
- 12.7mm
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Base Part Number :
- PBSS4480
- Power Dissipation :
- 2.5W
- Test Current :
- 5mA
- Collector Emitter Breakdown Voltage :
- 80V
- Width :
- 6.35mm
- Height :
- 6.35mm
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-243AA
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Power - Max :
- 1.6W
- Frequency :
- 150MHz
- Zener Voltage :
- 30V
- Pin Count :
- 3
- Weight :
- 4.535924g
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Flat
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Datasheets
- PBSS4480X,135
PBSS4480X,135 Documents
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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