PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A SOT89
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Published :
- 2003
- Termination :
- SMD/SMT
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Test Current :
- 5mA
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Height :
- 6.35mm
- hFE Min :
- 250
- Contact Plating :
- Tin
- Length :
- 12.7mm
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 550mW
- Base Part Number :
- PBSS4480
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 150MHz
- Power - Max :
- 1.6W
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Power Dissipation :
- 2.5W
- Current - Collector Cutoff (Max) :
- 100nA
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Width :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 4A
- Frequency :
- 150MHz
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Zener Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 150MHz
- Terminal Form :
- Flat
- Datasheets
- PBSS4480X,135
PBSS4480X,135 Documents
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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