PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A SOT89
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 4A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Length :
- 12.7mm
- Max Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 150MHz
- Power Dissipation :
- 2.5W
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Test Current :
- 5mA
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Width :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Base Part Number :
- PBSS4480
- Gain Bandwidth Product :
- 150MHz
- Pin Count :
- 3
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Terminal Form :
- Flat
- Published :
- 2003
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 1.6W
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 80V
- Zener Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- 150°C TJ
- Height :
- 6.35mm
- hFE Min :
- 250
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-243AA
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 550mW
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS4480X,135
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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