PBSS4232DD_L2_00001
- Mfr.Part #
- PBSS4232DD_L2_00001
- Manufacturer
- PANJIT
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A TO252
- Stock
- 1,048
- In Stock :
- 1,048
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- Manufacturer :
- PANJIT
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA, 3V
- Mounting Style :
- SMD/SMT
- Termination :
- Solder
- Contact Plating :
- Gold, Nickel
- Power - Max :
- 2 W
- Voltage - Collector Emitter Breakdown (Max) :
- 32 V
- Current - Collector Cutoff (Max) :
- 100nA
- Contact Material :
- Bronze
- Product Status :
- Active
- Transistor Type :
- NPN
- Product Category :
- Bipolar Transistors - BJT
- Housing Material :
- PBT
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Supplier Device Package :
- TO-252
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Manufacturer :
- Panjit
- Transistor Polarity :
- NPN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Flammability Rating :
- UL94 V-0
- Orientation :
- RIGHT ANGLE
- Contact Shape :
- Square
- Housing Color :
- Blue
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Number of Positions :
- 10
- PCB Mounting Orientation :
- RIGHT ANGLE
- Frequency - Transition :
- 270MHz
- Mounting Type :
- Surface Mount
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Series :
- GPT-20SN
- Lead Length :
- 4.11 mm
- Connector Type :
- Header
- Radiation Hardening :
- No
- Pitch :
- 2.54 mm
- Number of Contacts :
- 10
- RoHS :
- Compliant
- ELV :
- Compliant
- Brand :
- Panjit
- Current - Collector (Ic) (Max) :
- 2 A
- Packaging :
- MouseReel
- Mount :
- Through Hole
- Contact Gender :
- Male
- Datasheets
- PBSS4232DD_L2_00001

NPN -55°C ~ 150°C (TJ) 100nA TO-252-3, DPak (2 Leads + Tab), SC-63 MouseReel Surface Mount
PBSS4232DD_L2_00001 Overview
In this device, the DC current gain is 180 @ 500mA, 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 200mA, 2A.Supplier device package TO-252 comes with the product.The device exhibits a collector-emitter breakdown at 32 V.
PBSS4232DD_L2_00001 Features
the DC current gain for this device is 180 @ 500mA, 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the supplier device package of TO-252
PBSS4232DD_L2_00001 Applications
There are a lot of Panjit
PBSS4232DD_L2_00001 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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