PBSS301PD,115
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- Mfr.Part #
- PBSS301PD,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 20V 4A 6TSOP
- Stock
- 21,795
- In Stock ：
- 21,795
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 80
- Gain Bandwidth Product :
- 80MHz
- Number of Pins :
- 6
- Base Part Number :
- PBSS301P
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Transition Frequency :
- 80MHz
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SC-74, SOT-457
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 20V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 4A
- Power Dissipation :
- 2.5W
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 20V
- Mounting Type :
- Surface Mount
- Turn On Time-Max (ton) :
- 45ns
- Number of Elements :
- 1
- Pin Count :
- 6
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 80MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 420mV @ 600mA, 6A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 1.1W
- Power - Max :
- 1.1W
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- PBSS301PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS301PD,115 Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 420mV @ 600mA, 6A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
PBSS301PD,115 Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 420mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
PBSS301PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS301PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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