NXP3875GR

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Mfr.Part #
NXP3875GR
Manufacturer
Nexperia
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 50V 0.15A TO236AB
Stock
2,930
In Stock :
2,930

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Emitter Base Voltage (VEBO) :
5V
Max Collector Current :
150mA
Gain Bandwidth Product :
80MHz
Element Configuration :
Single
Series :
Automotive, AEC-Q101
Current - Collector Cutoff (Max) :
100nA ICBO
Pin Count :
3
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
50V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
Mount :
Surface Mount
Transition Frequency :
80MHz
Continuous Collector Current :
200mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 6V
Operating Temperature :
150°C TJ
Number of Elements :
1
Collector Base Voltage (VCBO) :
60V
Collector Emitter Saturation Voltage :
250mV
Collector Emitter Breakdown Voltage :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2012
Radiation Hardening :
No
Mounting Type :
Surface Mount
hFE Min :
120
Current - Collector (Ic) (Max) :
150mA
Transistor Type :
NPN
Max Power Dissipation :
200mW
Transistor Element Material :
SILICON
Terminal Position :
Dual
Factory Lead Time :
4 Weeks
Number of Terminations :
3
Terminal Form :
Gull wing
Datasheets
NXP3875GR
Introducing Transistors - Bipolar (BJT) - Single Nexperia NXP3875GR from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, NXP3875GR pinout, NXP3875GR datasheet PDF, NXP3875GR amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia NXP3875GR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia NXP3875GR


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

NXP3875GR Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 6V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 80MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.

NXP3875GR Features


the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz


NXP3875GR Applications


There are a lot of Nexperia USA Inc.
NXP3875GR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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