NXP3875GR
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- Mfr.Part #
- NXP3875GR
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO236AB
- Stock
- 2,930
- In Stock ：
- 2,930
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- hFE Min :
- 120
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 150mA
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Current - Collector (Ic) (Max) :
- 150mA
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 250mV
- Transition Frequency :
- 80MHz
- Element Configuration :
- Single
- Continuous Collector Current :
- 200mA
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Pin Count :
- 3
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 80MHz
- Series :
- Automotive, AEC-Q101
- Published :
- 2012
- Datasheets
- NXP3875GR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NXP3875GR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 6V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 80MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
NXP3875GR Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
NXP3875GR Applications
There are a lot of Nexperia USA Inc.
NXP3875GR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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