NXP3875YR
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- Mfr.Part #
- NXP3875YR
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO236AB
- Stock
- 2,848
- In Stock ：
- 2,848
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 80MHz
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector (Ic) (Max) :
- 150mA
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2012
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Max Collector Current :
- 150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Continuous Collector Current :
- 200mA
- Transition Frequency :
- 80MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Saturation Voltage :
- 250mV
- Series :
- Automotive, AEC-Q101
- hFE Min :
- 200
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Datasheets
- NXP3875YR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NXP3875YR Overview
This device has a DC current gain of 120 @ 2mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 200mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 80MHz.The maximum collector current is 150mA volts.
NXP3875YR Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
NXP3875YR Applications
There are a lot of Nexperia USA Inc.
NXP3875YR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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| NXP3875G,215 | Nexperia | 34,411 | SMALL SIGNAL BIPOLAR TRANSISTOR, |
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| NXP3875Y,215 | Nexperia | 14,262 | NOW NEXPERIA NXP3875Y - SMALL SI |
| NXP3875Y,215 | Nexperia | 34,102 | NOW NEXPERIA NXP3875Y - SMALL SI |
| NXP3875YVL | Nexperia | 10,482 | NXP3875Y/SOT23/TO-236AB |
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