NVMFD5C668NLWFT1G
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- Mfr.Part #
- NVMFD5C668NLWFT1G
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- T6 60V S08FL DUAL
- Stock
- 45,284
- In Stock ：
- 45,284
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 48 Weeks
- Datasheets
- NVMFD5C668NLWFT1G
NVMFD5C668NLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NVMFD5C668NLWFT1G Description
The NVMFD5C668NLWFT1G is a MOSFET – Power, Dual N-Channel, 60 V, 6.5 m, 68 A. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. About the same thing as MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.
NVMFD5C668NLWFT1G Features
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NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
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AEC−Q101 Qualified and PPAP Capable
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These Devices are Pb−Free and are RoHS Compliant
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Small Footprint (5x6 mm) for Compact Design
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Low RDS(on) to Minimize Conduction Losses
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Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWFT1G Applications
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Automotive
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Industrial
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Communications systems in particular
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Automotive electronics
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As switching devices in electronic control units
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As power converters in modern electric vehicles
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