NVMFD5C470NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Drain-source On Resistance-Max :

0.0178Ohm

Avalanche Energy Rating (Eas) :

49 mJ

DS Breakdown Voltage-Min :

40V

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Power - Max :

3W Ta 24W Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-F6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

110A

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Factory Lead Time :

48 Weeks

FET Type :

2 N-Channel (Dual)

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Published :

2013

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Series :

Automotive, AEC-Q101

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.2V @ 20μA

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

11A Ta 36A Tc

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Feature :

Standard

Number of Elements :

2