NVMFD5C462NLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

48 Weeks

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Number of Terminations :

6

Pulsed Drain Current-Max (IDM) :

311A

Reach Compliance Code :

not_compliant

FET Type :

2 N-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

18A Ta 84A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Package / Case :

8-PowerTDFN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

50W

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

174 mJ

Published :

2013

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 10A, 10V

JESD-609 Code :

e3

Terminal Form :

Flat

DS Breakdown Voltage-Min :

40V

Surface Mount :

yes

JESD-30 Code :

R-PDSO-F6

Operating Temperature :

-55°C~175°C TJ

Power - Max :

3W Ta 50W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Pbfree Code :

yes

Series :

Automotive, AEC-Q101

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0077Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR