NVMFD5877NLT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

8.1 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.05mm

Current - Continuous Drain (Id) @ 25°C :

6A

Halogen Free :

Halogen Free

Radiation Hardening :

No

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Package / Case :

8-PowerTDFN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Drain-source On Resistance-Max :

0.06Ohm

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Width :

5.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

6A

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

3.2W

Lead Free :

Lead Free

Turn-Off Delay Time :

14.5 ns

ECCN Code :

EAR99

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

39m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Continuous Drain Current (ID) :

17A

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Published :

2011

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

2

Pbfree Code :

yes

Terminal Form :

Flat

Case Connection :

DRAIN

Power Dissipation :

23W

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

DS Breakdown Voltage-Min :

60V

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

74A

Factory Lead Time :

13 Weeks

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-F6

Length :

6.1mm

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 10 hours ago)

Avalanche Energy Rating (Eas) :

10.5 mJ

Element Configuration :

Dual