NVMFD5877NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Max Power Dissipation :

3.2W

Resistance :

39mOhm

Element Configuration :

Dual

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Lead Free :

Lead Free

Radiation Hardening :

No

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

74A

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 day ago)

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Length :

6.1mm

Current - Continuous Drain (Id) @ 25°C :

6A

Height :

1.05mm

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

6A

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

39m Ω @ 7.5A, 10V

Continuous Drain Current (ID) :

17A

ECCN Code :

EAR99

Threshold Voltage :

3V

JESD-30 Code :

R-PDSO-F6

Vgs(th) (Max) @ Id :

3V @ 250µA

Avalanche Energy Rating (Eas) :

10.5 mJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.1mm

Number of Elements :

2

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

14.5 ns

Published :

2006

Pin Count :

8

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

8.1 ns

Terminal Finish :

Tin (Sn)

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Power Dissipation :

23W

Operating Temperature :

-55°C~175°C TJ