NVMFD5873NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Halogen Free :

Halogen Free

Avalanche Energy Rating (Eas) :

40 mJ

Gate Charge (Qg) (Max) @ Vgs :

30.5nC @ 10V

Power Dissipation :

3.1W

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

3.1W

JESD-30 Code :

R-PDSO-F6

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Number of Terminations :

6

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

FET Type :

2 N-Channel (Dual)

Reference Standard :

AEC-Q101

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

8

JESD-609 Code :

e3

Number of Elements :

2

Factory Lead Time :

13 Weeks

Published :

2013

Pulsed Drain Current-Max (IDM) :

190A

Transistor Element Material :

SILICON

Number of Pins :

8

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.013Ohm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

10A

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V