NVMFD5853NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

165A

Drain-source On Resistance-Max :

0.015Ohm

Turn-Off Delay Time :

22 ns

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Length :

6.1mm

Vgs(th) (Max) @ Id :

2.4V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

10 ns

Halogen Free :

Halogen Free

Published :

2013

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pin Count :

8

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Element Configuration :

Dual

Radiation Hardening :

No

Number of Elements :

2

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

6

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

10m Ω @ 15A, 10V

Avalanche Energy Rating (Eas) :

40 mJ

Height :

1.05mm

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-F6

Continuous Drain Current (ID) :

12A

Width :

5.1mm

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

34A

Factory Lead Time :

13 Weeks

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Drain to Source Voltage (Vdss) :

40V

Package / Case :

8-PowerTDFN

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Max Power Dissipation :

3W