NVMFD5852NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.05mm

Terminal Form :

Flat

Element Configuration :

Dual

Number of Elements :

2

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-F6

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

6.9m Ω @ 20A, 10V

Width :

5.1mm

Case Connection :

DRAIN

Pin Count :

8

Factory Lead Time :

13 Weeks

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

3.2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

40V

Max Power Dissipation :

3.2W

Surface Mount :

yes

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Pbfree Code :

yes

Number of Terminations :

6

Number of Pins :

8

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Reference Standard :

AEC-Q101

Continuous Drain Current (ID) :

15A

Length :

6.1mm

Drain Current-Max (Abs) (ID) :

44A

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

27 ns

Published :

2014

FET Technology :

METAL-OXIDE SEMICONDUCTOR