NVD6495NLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

6 Weeks

Vgs (Max) :

±20V

Power Dissipation-Max :

83W Tc

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

79 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

25A

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Surface Mount :

yes

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

50m Ω @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.054Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1024pF @ 25V

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Reference Standard :

AEC-Q101

Reach Compliance Code :

not_compliant