NVD6415ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

4

Power Dissipation :

83W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

89A

Power Dissipation-Max :

83W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

23A

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Number of Elements :

1

Vgs (Max) :

±20V

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Rds On (Max) @ Id, Vgs :

55m Ω @ 23A, 10V

Surface Mount :

yes

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.055Ohm

FET Type :

N-Channel

Fall Time (Typ) :

37 ns

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

ECCN Code :

EAR99

Published :

2009

Turn-Off Delay Time :

30 ns

Terminal Form :

Gull wing

Turn On Delay Time :

10 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Avalanche Energy Rating (Eas) :

79 mJ

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Reference Standard :

AEC-Q101

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Rise Time :

37ns

Drain to Source Breakdown Voltage :

100V