NVD6416ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Continuous Drain Current (ID) :

17A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Number of Pins :

4

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Pin Count :

4

Element Configuration :

Single

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

Lead Free :

Lead Free

Power Dissipation :

71W

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

62A

Turn-Off Delay Time :

24 ns

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Turn On Delay Time :

9.2 ns

Current - Continuous Drain (Id) @ 25°C :

17A Tc

FET Type :

N-Channel

Fall Time (Typ) :

20 ns

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

71W Tc

Rds On (Max) @ Id, Vgs :

81m Ω @ 17A, 10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

100V

Rise Time :

22ns

Drain-source On Resistance-Max :

0.081Ohm