NVD4856NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

180.5 mJ

Power Dissipation-Max :

1.33W Ta 60W Tc

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 30A, 10V

Pulsed Drain Current-Max (IDM) :

179A

Number of Pins :

4

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

13.3A Ta 89A Tc

Drain Current-Max (Abs) (ID) :

13.3A

Drain to Source Breakdown Voltage :

25V

Pin Count :

4

Continuous Drain Current (ID) :

89A

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2241pF @ 12V

Weight :

3.949996g

Published :

2014

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

ECCN Code :

EAR99

Reference Standard :

AEC-Q101

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0068Ohm

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

32 Weeks

Radiation Hardening :

No

Element Configuration :

Single

Pbfree Code :

yes