NVD4810NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10m Ω @ 30A, 10V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current (ID) :

54A

Pin Count :

4

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Pbfree Code :

yes

Published :

2011

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 12V

Surface Mount :

yes

Power Dissipation-Max :

1.4W Ta 50W Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

98 mJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9A Ta 54A Tc

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Lifecycle Status :

LIFETIME (Last Updated: 2 days ago)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Factory Lead Time :

22 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

4

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Rise Time :

20.7ns

Drain Current-Max (Abs) (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)