NVD4808NT4G
- Mfr.Part #
- NVD4808NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A/63A DPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 13.8A
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 30A, 10V
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 63A
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 1.4W Ta 54.6W Tc
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 11.5V
- Published :
- 2014
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 2 days ago)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1538pF @ 12V
- DS Breakdown Voltage-Min :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 4.5V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 63A Tc
- Datasheets
- NVD4808NT4G

N-Channel Tape & Reel (TR) 8m Ω @ 30A, 10V ±20V 1538pF @ 12V 13nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD4808NT4G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1538pF @ 12V.This device conducts a continuous drain current (ID) of 13.8A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 63A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 11.5V volts (4.5V 11.5V).
NVD4808NT4G Features
a continuous drain current (ID) of 13.8A
a 30V drain to source voltage (Vdss)
NVD4808NT4G Applications
There are a lot of ON Semiconductor
NVD4808NT4G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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