NVD3055L170T4G
- Mfr.Part #
- NVD3055L170T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- N-CHANNEL POWER LOGIC LEVEL MOSF
- Stock
- 2,280
- In Stock :
- 2,280
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pin Count :
- 3
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 9A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 9.7 ns
- Gate to Source Voltage (Vgs) :
- 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 275pF @ 25V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 69ns
- Published :
- 2009
- Drain Current-Max (Abs) (ID) :
- 9A
- Vgs (Max) :
- ±15V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Fall Time (Typ) :
- 38 ns
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 1.5W Ta 28.5W Tj
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 10 ns
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 4.5A, 5V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Weight :
- 3.949996g
- Drain to Source Breakdown Voltage :
- 60V
- Number of Channels :
- 1
- Pulsed Drain Current-Max (IDM) :
- 27A
- Datasheets
- NVD3055L170T4G

N-Channel Tape & Reel (TR) 170m Ω @ 4.5A, 5V ±15V 275pF @ 25V 10nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD3055L170T4G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 275pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.Peak drain current is 27A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 15V to 1.Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
NVD3055L170T4G Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
based on its rated peak drain current 27A.
NVD3055L170T4G Applications
There are a lot of ON Semiconductor
NVD3055L170T4G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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