NVD3055L170T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Rise Time :

69ns

Pin Count :

3

JESD-609 Code :

e3

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

9A Ta

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Published :

2009

FET Type :

N-Channel

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

9A

Turn-Off Delay Time :

10 ns

Rds On (Max) @ Id, Vgs :

170m Ω @ 4.5A, 5V

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 25V

Weight :

3.949996g

Number of Channels :

1

Power Dissipation-Max :

1.5W Ta 28.5W Tj

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

38 ns

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

9A

Pulsed Drain Current-Max (IDM) :

27A

Number of Pins :

3

Vgs (Max) :

±15V

Gate to Source Voltage (Vgs) :

15V

Element Configuration :

Single

Number of Terminations :

2

Turn On Delay Time :

9.7 ns

Mounting Type :

Surface Mount

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

5V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1