NVD3055L170T4G
- Mfr.Part #
- NVD3055L170T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 9A DPAK
- Stock
- 2,280
- In Stock :
- 2,280
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.5W Ta 28.5W Tj
- Weight :
- 3.949996g
- Pulsed Drain Current-Max (IDM) :
- 27A
- Pbfree Code :
- yes
- Rise Time :
- 69ns
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±15V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 9A
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 9A
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 275pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 4.5A, 5V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn On Delay Time :
- 9.7 ns
- Gate to Source Voltage (Vgs) :
- 15V
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Fall Time (Typ) :
- 38 ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 10 ns
- Datasheets
- NVD3055L170T4G

N-Channel Tape & Reel (TR) 170m Ω @ 4.5A, 5V ±15V 275pF @ 25V 10nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD3055L170T4G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 275pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.Peak drain current is 27A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 15V to 1.Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
NVD3055L170T4G Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
based on its rated peak drain current 27A.
NVD3055L170T4G Applications
There are a lot of ON Semiconductor
NVD3055L170T4G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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