NVD3055-094T4G
- Mfr.Part #
- NVD3055-094T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A DPAK
- Stock
- 8,089
- In Stock :
- 8,089
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2014
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Drain-source On Resistance-Max :
- 0.094Ohm
- Rds On (Max) @ Id, Vgs :
- 94m Ω @ 6A, 10V
- Fall Time (Typ) :
- 23.9 ns
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 25.2 ns
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 12A
- Power Dissipation-Max :
- 1.5W Ta 48W Tj
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Turn On Delay Time :
- 7.7 ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Halogen Free :
- Halogen Free
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Rise Time :
- 32.3ns
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 5 Weeks
- Pulsed Drain Current-Max (IDM) :
- 45A
- Weight :
- 3.949996g
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Surface Mount :
- yes
- Datasheets
- NVD3055-094T4G

N-Channel Tape & Reel (TR) 94m Ω @ 6A, 10V ±20V 450pF @ 25V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD3055-094T4G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [25.2 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.A turn-on delay time of 7.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
NVD3055-094T4G Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25.2 ns
based on its rated peak drain current 45A.
NVD3055-094T4G Applications
There are a lot of ON Semiconductor
NVD3055-094T4G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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