NVB6412ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

240A

ECCN Code :

EAR99

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

167W Tc

Factory Lead Time :

25 Weeks

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

18.2m Ω @ 58A, 10V

Element Configuration :

Single

Continuous Drain Current (ID) :

58A

Published :

2009

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Number of Terminations :

2

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

167W

Mounting Type :

Surface Mount