NVB6412ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

25 Weeks

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Pulsed Drain Current-Max (IDM) :

240A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

58A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

167W

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Published :

2009

Vgs (Max) :

±20V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

ECCN Code :

EAR99

Number of Terminations :

2

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Power Dissipation-Max :

167W Tc

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

18.2m Ω @ 58A, 10V

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing