NVB6412ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

18.2m Ω @ 58A, 10V

FET Type :

N-Channel

Power Dissipation-Max :

167W Tc

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Power Dissipation :

167W

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Terminations :

2

Number of Pins :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

58A

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Factory Lead Time :

25 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

240A

Lead Free :

Lead Free

Pin Count :

3