NVB6410ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Turn On Delay Time :

17 ns

Lead Free :

Lead Free

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Terminal Form :

Gull wing

Pin Count :

3

Power Dissipation-Max :

188W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Power Dissipation :

188W

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

76A

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

13m Ω @ 76A, 10V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Vgs (Max) :

±20V

Factory Lead Time :

25 Weeks

Surface Mount :

yes

Published :

2009

Fall Time (Typ) :

190 ns

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Rise Time :

170ns

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

500 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

120 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Packaging :

Tape and Reel (TR)