NVB6410ANT4G
- Mfr.Part #
- NVB6410ANT4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 76A D2PAK
- Stock
- 23,303
- In Stock :
- 23,303
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 17 ns
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Power Dissipation-Max :
- 188W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Power Dissipation :
- 188W
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 76A
- Drain to Source Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 76A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 25 Weeks
- Surface Mount :
- yes
- Published :
- 2009
- Fall Time (Typ) :
- 190 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 170ns
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 120 ns
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NVB6410ANT4G

N-Channel Tape & Reel (TR) 13m Ω @ 76A, 10V ±20V 4500pF @ 25V 120nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVB6410ANT4G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [76A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 120 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
NVB6410ANT4G Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 120 ns
NVB6410ANT4G Applications
There are a lot of ON Semiconductor
NVB6410ANT4G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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